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Freescale Semiconductor Technical Data
Document Number: MW5IC970NBR1 Rev. 0, 4/2006
RF LDMOS Wideband 2 - Stage Power Amplifiers
Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. The device has a 2 - stage design with off - chip matching for the input, interstage and output networks to cover the desired frequency band. * Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 Watts PEP Power Gain -- 30 dB Drain Efficiency -- 48% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 70 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW5IC970NBR1
800 - 900 MHz, 70 W, 28 V RF LDMOS WIDEBAND 2 - STAGE POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC
VRD2 VRG2/VGS2 Quiescent Current Temperature Compensation
VRG1/VGS1
GND VRD2 VRG2/VGS2 VRG1/VGS1 RFin1 GND VD2/RFout2 VRD1 VD1/RFout1 VD1/RFout1 RFin2 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
VD2/ RFout2
RFin1 VRD1 VD1/RFout1 VD1/RFout1 RFin2
13 12
NC GND
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW5IC970NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, + 65 - 0.5, + 15 - 65 to +200 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Final Application (Pout = 70 W CW) EDGE Application (Pout = 35 W CW) Stage 1, 28 Vdc, IDQ = 80 mA Stage 2, 28 Vdc, IDQ = 650 mA Stage 1, 28 Vdc, IDQ = 80 mA Stage 2, 28 Vdc, IDQ = 650 mA Symbol RJC 5.2 0.8 5.3 0.8 Value (1) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28.5 Vdc, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 W PEP, f1 = 870.0 MHz, f2 = 870.1 MHz Power Gain Drain Efficiency Input Return Loss Intermodulation Distortion Gps D IRL IMD 26.5 40 -- -- 30 48 - 12 - 33 34.5 -- - 10 - 28 dB % dB dBc
Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 650 mA, 740 - 870 MHz, 870 - 960 MHz Gain Flatness in 30 MHz Bandwidth @ Pout = 70 W CW Gain Flatness in 30 MHz Instantaneous Bandwidth @ Pout = 70 W CW Delay @ Pout = 70 W CW Including Output Matching Part - to - Part Phase Variation @ Pout = 70 W CW GF GF Delay -- -- -- -- 2 0.2 4.5 15 -- -- -- -- dB dB ns
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW5IC970NBR1 2 RF Device Data Freescale Semiconductor
VBIAS VD2 R6 F1 R4 R5 R3 R7 R2 C18 C16 R1 RF INPUT C15 Z1 C1 Z2 C2 C17 VG2R2 VG1R1 Z3 1 2 3 4 5 Z5 6 7 8 C5 Z4 11 C3 12 9 10 NC 13 C14 Z11 14 C6 C11 C13 Z10 Quiescent Current Temperature Compensation 16 NC 15 C8 C9 R8
Z6 C7 Z7 C10 Z8 C12 Z9
RF OUTPUT
C4
F2 VD1
Z1 Z2 Z3 Z4 Z5 Z6
0.485 x 0.066 Microstrip 0.270 x 0.040 Microstrip 0.068 x 0.020 Microstrip 0.950 x 0.040 Microstrip 0.131 x 0.233 Microstrip 0.797 x 0.050 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.040 x 0.233 Microstrip 0.450 x 0.120 Microstrip 0.100 x 0.066 Microstrip 1.000 x 0.040 Microstrip 0.148 x 0.040 Microstrip Rogers 4350B, 0.030, r = 3.5
Figure 3. MW5IC970NBR1 Test Circuit Schematic Table 6. MW5IC970NBR1 Test Circuit Component Designations and Values
Part C1, C10, C11 C2 C3, C8, C14, C15, C17 C4, C9 C5 C6, C7 C12 C13 C16, C18, C19, C20 F1 F2 R1, R7 R2, R5 R3, R4, R8 R6 Description 3.9 pF Chip Capacitor 56 pF Chip Capacitor 39 pF Chip Capacitors 10 F Chip Capacitors 24 pF Chip Capacitor 15 pF Chip Capacitors 4.7 pF Chip Capacitor 0.4 pF Chip Capacitor 0.015 F Chip Capacitors 5A Surface Mount Fuse 1A Surface Mount Fuse 681 , Chip Resistors 4.75 k, Chip Resistors 1.21 k, Chip Resistors 267 , Chip Resistor Part Number 600S3R9BT 600S560JW GRM40001C0G390J050BD ECJ4YF1H106Z 600F240JT 600F150JT 600F4R7BT 600F0R4BT GRM400X7R153J050BD 1FT5A 1FT1A ATC ATC Murata Panasonic ATC ATC ATC ATC Murata Little Fuse Little Fuse Manufacturer
MW5IC970NBR1 RF Device Data Freescale Semiconductor 3
VD2
F1 VG2
C9 R6 VG1 C8 R8 R4 R5 R3 R2 R1 C16 C15 C7 C2
C
R7 C18 C17
C11 C13 C10 C6 C12
C1 C5
C14
C3 MW5IC970 VD1 C4 Rev. 1
F2
Figure 4. MW5IC970NBR1 Test Circuit Component Layout
MW5IC970NBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
60 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) PAE 40 Gps 20 VDD = 28.5 Vdc, Pout = 35 W (Avg.) IDQ1 = 80 mA, IDQ2 = 650 mA 100 kHz Tone Spacing IRL -20 IMD -40 800 820 840 860 880 900 920 940 -40 960 -20 40 60
20
0
0
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance @ Pout = 35 Watts (Avg.)
IMD, INTERMODULATION DISTORTION (dBc) 32 IDQ2 = 975 mA 31 Gps, POWER GAIN (dB) 812 mA 650 mA 30 488 mA 29 VDD = 28.5 Vdc, IDQ1 = 80 mA f1 = 870 MHz, f2 = 870.1 MHz Two-Tone Measurements 100 kHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 -10 -20 -30 -40 -50 5th Order -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 7th Order VDD = 28.5 Vdc IDQ1 = 80 mA, IDQ2 = 650 mA f1 = 870 MHz, f2 = 870.1 MHz Two-Tone Measurements 100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB)
3rd Order
28
325 mA
27 1
Figure 6. Two - Tone Power Gain versus Output Power
IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 3rd Order -35 -40 -45 -50 -55 0.1 5th Order 7th Order VDD = 28.5 Vdc, Pout = 35 W (PEP) IDQ1 = 80 mA, IDQ2 = 650 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 870 MHz 34 32 Gps, POWER GAIN (dB) 30 28 26 24 22 20 0.1
Figure 7. Intermodulation Distortion Products versus Output Power
70 25_C 60 85_C 50 40 85_C 30 20 PAE 10 0 1000 PAE, POWER ADDED EFFICIENCY (%) VDD = 28.5 Vdc, IDQ1 = 80 mA IDQ2 = 650 mA, f = 870 MHz -30_C Gps TC = 25_C -30_C
1
10
100
200
1
10
100
TWO-TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Figure 9. Power Gain and Power Added Efficiency versus CW Output Power
MW5IC970NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
32 31 Gps, POWER GAIN (dB) IDQ1 = 80 mA IDQ2 = 650 mA f = 870 MHz
30
29 16 V 24 V 27 0 VDD = 12 V 20 40 20 V 60 80 32 V 28.5 V 100 120 140
28
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
MW5IC970NBR1 6 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
B
PIN ONE INDEX
E1
aaa
M
r1 CA B
A
NOTE 6
4X
aaa
M
b1 CA
e1 e2 D1 e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
aaa
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
Y
ZONE "J"
F
E2
Y
A1 7 A2
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09 ISSUE L TO - 272 WB - 16 PLASTIC
RF Device Data Freescale Semiconductor
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N VIEW Y - Y
MW5IC970NBR1 7
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MW5IC970NBR1 8Rev. 0, 4/2006
Document Number: MW5IC970NBR1
RF Device Data Freescale Semiconductor

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